Samsung Debuts 20nm-Class, 64GB 3bit NAND Flash Storage

October 13, 2010, By Sanjeev Ramachandran

Samsung has announced that it has developed the industry’s first 3-bit-cell, 64 gigabit NAND flash memory using 20 nanometer process technology. The company says that this new chip can be used in high-density flash solutions such as USB flash drives or SD memory cards.

Samsung, which has repeatedly provided the market with leading-edge NAND flash solutions, has now entered into full production of 20nm-class 64 GB 3-bit devices.

The new NAND flash uses 8GB per chip and Toggle DDR technology. The device offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips. It has a 60 percent higher productivity level than 30nm-class, 32 GB 3-bit NAND.

Samsung currently produces about 40 percent of the world’s NAND flash storage. Samsung flash storage is used extensively by Apple in their iOS devices. Some reports are suggesting that future upgrades and other iOS devices could have greater storage capacity all thanks to the new NAND flash.

It is expected that the flash chips will be in great demand for SSD hard drives, SD camera and video cards as well as smartphones.

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